Method of forming oxidic high T.sub.c superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy
AssigneeLitton Systems, Inc.
InventorsRoger F. Belt, John B. Ings
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Abstract
A method of forming an epitaxial layer of an oxidic high T.sub.c superconductor on a substantially lattice matched monocrystalline substrate is described. The film is formed by liquid phase epitaxy utilizing a melt containing a nutriment composed of oxides of each element of the oxidic superconductor and a non-oxidic flux for such oxides. The preferred flux is an alkali halide. The monocrystalline substrate on which the film is dsposited is introduced into the melt and an epitaxial layer of oxidic superconductor is formed on the substrate.
Claims45
In a method of forming an epitaxial layer of an oxidic high T.sub.c superconductor on a substantially lattice matched monocrystalline substrate the improvement which comprises:
- a) forming a melt wherein the primary phase to crystallize out on cooling of the melt to effect film growth is the phase of the high T.sub.c oxidic superconductor, said melt comprising a nutriment composed of oxides of each element of said oxidic superconductor and a non-oxidic flux for said oxides;
- b) introducing the substrate into the melt;
- and
- c) cooling the melt to deposit an epitaxial layer of oxidic superconductor on said substrate.
In a method of forming an epitaxial layer of an oxidic perovskite-related superconductor on a substantially lattice matched monocrystalline perovskite-type substrate, the improvement which comprises:
- a) forming a melt wherein the primary phase to crystallize out of the cooling of the melt to effect film growth is the phase of the high T.sub.c oxidic superconductor, said melt comprising a nutriment composed of oxides of each element of said oxidic superconductor and a non-oxidic flux for said oxides;
- b) immersing the substrate into the melt;
- c) cooling the melt to form a film consisting essentially of said oxidic superconductor on a surface of the substrate;
- d) withdrawing the substrate from the melt, said substrate having an epitaxial film of oxidic superconductor formed thereon and said film having a residue of flux thereon;
- and,
- e) removing said residue of flux from said film.
A melt for liquid phase epitaxial growth of High T.sub.c oxidic superconductor film on a substantially lattice matched substrate comprising:
- a) nutriment comprised of oxides of each element of the oxidic superconductor;
- and
- b) a flux which does not react with any of the oxides at the growth temperature of the oxidic film,
- wherein the primary phase to crystallize out on cooling of the melt to effect film growth is the phase of the High T.sub.c oxidic superconductor.
Dependencies are inferred from the claim text.