Low temperature method of preparing GaN single crystals

Abstract

A low temperature method for preparing GaN single crystals for use, for example, for blue light emitting diodes and laser diodes, comprises using sodium as a flux in a reaction system containing only gallium, sodium and nitrogen, e.g., by thermally decomposing sodium azide in a closed reaction zone containing gallium or by reacting gallium with nitrogen supplied from a tank in a closed reaction zone containing sodium, optionally in the presence of a catalytic amount of an alkaline earth metal.

Dependencies are inferred from the claim text.