C30B 19/08
Heating of the reaction chamber or the substrate
C30B19/08 (Heating of the reaction chamber or the substrate) appears on 59 US grants and 58 published applications in this corpus.
Search patents in C30B- Granted patents
- 59
- Published applications
- 58
- Assignees
- 39
- Inventors
- 149
- Latest grant
- 7 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 4 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 2 |
| 2010 | 0 | 1 |
| 2011 | 1 | 0 |
| 2012 | 1 | 1 |
| 2013 | 1 | 2 |
| 2014 | 0 | 5 |
| 2015 | 2 | 3 |
| 2016 | 2 | 8 |
| 2017 | 6 | 16 |
| 2018 | 4 | 4 |
| 2019 | 7 | 0 |
| 2020 | 6 | 4 |
| 2021 | 3 | 1 |
| 2022 | 1 | 2 |
| 2023 | 3 | 2 |
| 2024 | 2 | 0 |
| 2025 | 1 | 1 |
| 2026 | 0 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Strain engineering and epitaxial stabilization of halide perovskites7 Oct 2025US 12,435,442 B2The Regents of the University of California
- Additively manufactured single-crystal metallic components, and methods for producing the same3 Sep 2024US 12,076,818 B2HRL Laboratories, LLC
- Additively manufactured single-crystal metallic components, and methods for producing the same9 Jan 2024US 11,865,641 B1HRL Laboratories, LLC
- Integrated crucible and die system for sapphire sheet growing1 Aug 2023US 11,713,519 B1Sapphire Systems Inc.
- Targeted heat control system and method for integrated crucible and die system for sapphire sheet growing1 Aug 2023US 11,713,520 B1Sapphire Systems Inc.
- Silicon carbide epitaxial substrate and method of manufacturing the same1 Oct 2026US 2026/0297799 A1
- Sic single crystal substrate, method of manufacturing sic single crystal, and apparatus of manufacturing sic single crystal14 May 2026US 2026/0132544 A1
- Methods of manufacture of templates with irni nanobranches (nbs), irnicu@cu nanostructures and electrocatalysts comprising irnicu@cu nanostructures, and applications thereof8 Jan 2026US 2026/0009160 A1City University of Hong Kong
- Crystal preparation apparatus and crystal preparation method13 Mar 2025US 2025/0084558 A1Meishan Boya Advanced Materials Co., Ltd.
- Additively manufactured single-crystal metallic components, and methods for producing the same16 Nov 2023US 2023/0364714 A1HRL Laboratories, LLC
Most cited
By later US patents
- Systems and methods for additive manufacturing and repair of metal components114US 9,522,426 B2Georgia Tech Research Corporation · 2016
- Method and apparatus for production of liquid phase epitaxial layers of semiconductors22US 3,933,538 ASumitomo Electric Industries, Ltd. · 1976
- Consolidation of diamond packed powders20US 5,080,752 AThe United States of America as represented by the Secretary of the Navy · 1992
- Method for epitaxial growth of thin semiconductor layer from solution16US 4,088,514 AMatsushita Electric Industrial Co., Ltd. · 1978
- Method for liquid-phase thin film epitaxy15US 4,918,029 ASamsung Electronics Co., Ltd. · 1990