Strain engineering and epitaxial stabilization of halide perovskites
AssigneeThe Regents of the University of California
InventorsSheng Xu, Yimu Chen, Yusheng Lei
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Abstract
In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.
Claims21
A method of forming a device, comprising:
- choosing a first halide perovskite material from which a halide perovskite thin film is to be formed from a solvent-based liquid solution;
- choosing an epitaxial substrate formed from a second halide perovskite material;
- fabricating a patterned mask to control solvent-based liquid solution growth behavior of the halide perovskite thin film on the epitaxial substrate;
- and
- epitaxially forming the halide perovskite thin film on the epitaxial substrate from the first halide perovskite material, the first halide perovskite material being α-FAPbI3, where FA is formamidinium, wherein the epitaxial substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property, the property being selected from the group including crystal structure stability, charge carrier mobility and band gap, and wherein the epitaxially forming includes epitaxially forming an elastically strained halide perovskite thin film on the epitaxial substrate from the first halide perovskite material, wherein the elastically strained halide perovskite thin film has a thickness less than 100 nm, and the first halide perovskite has a compressive strain between 0% and −2.4%, wherein the elastically strained halide perovskite thin film has a room temperature bandgap between 1.488 eV and 1.523 eV, an External Quantum Efficiency (EQE) between 3×10−4%, and 6×10−4% and a time-of-flight electron mobility between 20 cm2V−1s−1 and 30 cm2V−1s−1.
A method of forming a device, comprising:
- choosing a first halide perovskite material from which a halide perovskite thin film is to be formed from a solvent-based liquid solution and a single crystal halide perovskite substrate from a second halide perovskite material on which the halide perovskite thin film is to be formed to tune a property of the halide perovskite thin film using strain modulation to thereby impose a compressive or tensile strain on the halide perovskite thin film, wherein the first halide perovskite material is α-FAPbI3, where FA is formamidinium;
- fabricating a patterned mask to control solvent-based liquid solution growth behavior of the halide perovskite thin film on the single crystal halide perovskite substrate;
- and
- epitaxially forming the halide perovskite thin film on the chosen single crystal halide perovskite substrate from the first halide perovskite material, wherein the epitaxially forming includes epitaxially forming an elastically strained halide perovskite thin film on the epitaxial substrate from the first halide perovskite material, wherein the elastically strained halide perovskite thin film has a thickness less than 100 nm, and the first halide perovskite has a compressive strain between 0% and −2.4%, wherein the elastically strained halide perovskite thin film has a room temperature bandgap between 1.488 eV and 1.523 eV, an External Quantum Efficiency (EQE) between 3×10−4%, and 6×10−4% and a time-of-flight electron mobility between 20 cm2V−1s−1 and 30 cm2V−1s−1.
Dependencies are inferred from the claim text.