C23F 1/38
For etching refractory metals
Official title: for etching refractory metals
C23F1/38 (For etching refractory metals) appears on 72 US grants and 95 published applications in this corpus.
Search patents in C23F- Granted patents
- 72
- Published applications
- 95
- Assignees
- 69
- Inventors
- 235
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 3 |
| 2005 | 1 | 1 |
| 2006 | 3 | 2 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 3 |
| 2010 | 0 | 0 |
| 2011 | 0 | 4 |
| 2012 | 1 | 1 |
| 2013 | 2 | 4 |
| 2014 | 2 | 3 |
| 2015 | 5 | 6 |
| 2016 | 2 | 11 |
| 2017 | 3 | 5 |
| 2018 | 4 | 4 |
| 2019 | 4 | 4 |
| 2020 | 3 | 5 |
| 2021 | 4 | 5 |
| 2022 | 4 | 7 |
| 2023 | 3 | 11 |
| 2024 | 7 | 6 |
| 2025 | 7 | 3 |
| 2026 | 2 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for producing plasmonic-nanostructure spectrally selective solar absorber having high solar absorptance, low thermal emittance, and high thermal stability16 Jun 2026US 12,656,024 B2Northeastern University
- Composition and method for creating nanoscale surface geometry on an implantable device31 Mar 2026US 12,590,248 B2Tech Met, Inc.
- Treatment liquid for semiconductors and method for producing same30 Dec 2025US 12,509,632 B2Tokuyama Corporation
- Surfactants for electronics products4 Nov 2025US 12,460,131 B2AdvanSix Resins & Chemicals LLC
- Substrate processing method14 Oct 2025US 12,442,066 B2SCREEN Holdings Co., Ltd.
- Porous metal structures incorporating nanoparticles13 Aug 2026US 2026/0232876 A1Yissum Research Development Company of the Hebrew University of Jerusalem
- Composition and method for creating nanoscale surface geometry on an implantable device30 Jul 2026US 2026/0218048 A1Tech Met, Inc.
- Composition, method of treating metal-containing layer, and method of manufacturing semiconductor device4 Jun 2026US 2026/0152687 A1Samsung Electronics Co., Ltd.
- Composition, method of treating metal-containing layer by using the same, and method of manufacturing semiconductor device by using the same9 Apr 2026US 2026/0098346 A1Samsung Electronics Co., Ltd.
- Etchant and method for manufacturing semiconductor device12 Mar 2026US 2026/0071332 A1FUJIFILM Corporation
Most cited
By later US patents
- Method of etching back of tungsten layers on semiconductor wafers, and solution therefore110US 4,992,135 AMicron Technology, Inc. · 1991
- Method of forming suspended gate, chemically sensitive field-effect transistor57US 4,671,852 AThe Standard Oil Company · 1987
- Post fabrication processing of semiconductor chips46US 5,277,756 ADigital Equipment Corporation · 1994
- Post fabrication processing of semiconductor chips44US 5,130,275 ADigital Equipment Corporation · 1992
- Method of chemically etching TiW and/or TiWN38US 4,787,958 AMotorola, Inc. · 1988