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US 4,787,958 AGranted
Method of chemically etching TiW and/or TiWN
AssigneeMotorola, Inc.
InventorWilliam H. Lytle
Life of this patent
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Abstract
A method of chemically etching TiW and/or TiWN is described wherein the etching of a semiconductor substrate having a layers of TiWN, TiW and Au disposed between the substrate and a Au bump is performed with a 30% solution of hydrogen peroxide (H.sub.2 O.sub.2) at a temperature of approximately 90.degree. C.
Claims5
A method of chemically etching a semiconductor device comprising:
- providing a semiconductor device having a substrate, a layer of titanium-tungsten-nitride coupled to said substrate, a layer of titanium-tungsten coupled to said layer of titanium-tungsten-nitride, and a metal contact coupled to a first portion of said titanium-tungsten layer;
- and
- etching said titanium-tungsten and titanium-tungsten-nitride layers in a 30% solution of hydrogen peroxide at a temperature between approximately 80.degree.-90.degree. C. to remove a second portion of said titanium-tungsten layer and a portion of said titanium-tungsten-nitride layer adjacent said second portion of said titanium tungsten layer.
A method of chemically etching a semiconductor device comprising:
- providing a semiconductor device having a substrate, a layer of titanium-tungsten-nitride coupled to said substrate, a layer of titanium-tungsten coupled to said layer of titanium-tungsten-nitride, a layer of gold coupled to said layer of titanium-tungsten, and a metal contact coupled to a first portion of said gold layer;
- etching said layer of gold to remove a portion not coupled to said metal contact;
- and
- etching said titanium-tungsten and titaium-tungsten-nitride layers in a 30% solution of hydrogen peroxide at approximately 80.degree.-90.degree. C.
1 more element
Dependencies are inferred from the claim text.