Substrate processing method

A substrate processing method comprising:

• heating a plurality of substrates disposed in an oxidation space inside a substrate processing apparatus while supplying an oxygen gas or an ozone gas to the plurality of substrates inside the oxidation space to change, in each of the plurality of substrates, a surface layer of a molybdenum film formed on the substrate to molybdenum trioxide without changing a portion other than the surface layer of the molybdenum film to the molybdenum trioxide;
• transferring the plurality of substrates inside the oxidation space to an etching space inside the substrate processing apparatus differing from the oxidation space;
• and
• supplying an etching liquid to the plurality of substrates inside the etching space to make, in each of the plurality of substrates, the surface layer that changed to the molybdenum trioxide dissolve in the etching liquid while leaving, on the substrate, the portion other than the surface layer of the molybdenum film.