Composition, method of treating metal-containing layer, and method of manufacturing semiconductor device

A composition comprising:

• an oxidizing agent;
• an ammonium-containing compound;
• and
• an etching controller, wherein
• the etching controller comprises a compound represented by Formula 1:
• wherein, in Formula 1,
• L1 and L2 are each independently a single bond or oxygen,
• R1 is hydrogen, a C1-C50 alkyl group, or a C2-C50 alkenyl group,
• R2 and R3 are each independently a C1-C50 alkyl group or a C2-C50 alkenyl group, and
• in R2, R3, and R1 when R1 is not hydrogen, at least one hydrogen in each of the C1-C50 alkyl group and the C2-C50 alkenyl group is optionally substituted with a halogen atom.

A method of treating a metal-containing layer, the method comprising:

• preparing a metal-containing layer including a first region and a second region, wherein a material in the first region of the metal-containing layer is different from a material in the second region of the metal-containing layer;
• and
• contacting the metal-containing layer with a composition,
• wherein the first region of the metal-containing layer and the second region of the metal-containing layer each independently comprise titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), copper (Cu), cobalt (Co), tungsten (W), ruthenium (Ru), molybdenum (Mo), zinc (Zn), hafnium (Hf), or any combination thereof,
• the composition comprises an oxidizing agent, an ammonium-containing compound, and an etching controller, and
• the etching controller comprises a compound represented by Formula 1:
• wherein, in Formula 1,
• L1 and L2 are each independently a single bond or oxygen,
• R1 is hydrogen, a C1-C50 alkyl group, or a C2-C50 alkenyl group,
• R2 and R3 are each independently a C1-C50 alkyl group or a C2-C50 alkenyl group, and
• in R2, R3, and R1 when R1 is not hydrogen, at least one hydrogen in each of the C1-C50 alkyl group and the C2-C50 alkenyl group is optionally substituted with a halogen atom.