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US 2026/0071332 A1Published application
Etchant and method for manufacturing semiconductor device
AssigneeFUJIFILM Corporation
InventorsShota OI, Atsushi MIZUTANI
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Abstract
An object is to provide an etchant which has an excellent etching rate and can suppress roughness of a surface of a molybdenum-containing substance after an etching treatment. The etchant of the present invention is an etchant used for a molybdenum-containing substance, the etchant containing a quinone compound having a quinone structure and a solvent.
Claims20
An etchant used for a molybdenum-containing substance, comprising:
- a quinone compound having a quinone structure;
- and
- a solvent.
Dependencies are inferred from the claim text.