Composition, method of treating metal-containing layer by using the same, and method of manufacturing semiconductor device by using the same

A composition comprising:

• an oxidizing agent at about 16 wt % to about 50 wt % per 100 wt % of the composition;
• an ammonium-based buffer;
• and
• an etching controller, the etching controller comprising a compound represented by Formula 1:
• wherein, in Formula 1,
• R1 is a C12-C50 alkyl group or a C12-C50 alkenyl group,
• R2 is hydrogen, a C1-C50 alkyl group, or a C2-C50 alkenyl group,
• L1 is a C1-C20 alkylene group,
• T1 is a linker represented by one of 2(1) to 2(3), and
• X is hydrogen, an alkali metal, or an ammonium group,
• wherein at least one of methylene groups included in R1 and R2 is optionally substituted with O or S, and
• wherein at least one of hydrogens included in R1, R2, and L1 is optionally substituted with a halogen atom, a C1-C30 alkoxy group, or a C1-C30 alkylthio group,
• wherein, in Formulae 2(1) to 2(3),
• * indicates a binding site to L1, and
• *′ indicates a binding site to O−.