Treatment liquid for semiconductors and method for producing same
AssigneeTokuyama Corporation
InventorsYuki Kikkawa, Tomoaki Sato, Takafumi Shimoda, Takayuki Negishi
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokuyama Corporation
InventorsYuki Kikkawa, Tomoaki Sato, Takafumi Shimoda, Takayuki Negishi
Estimating the term…
A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing hypobromite ions. Also provided is a treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid characterized by being formed by adding and mixing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein relative to a total mass, an added amount of the bromine-containing compound is 0.008 mass % or more and less than 10 mass % as an amount of bromine element, and an added amount of the oxidizing agent is 0.1 mass ppm or more and 20 mass % or less; and pH at 25° C. is 8 or higher and 14 or lower. Further provided is a method for producing the treatment liquid for a semiconductor.
A treatment liquid for a semiconductor of a group 6 metal, the treatment liquid comprising hypobromite ions and chloride ions, and a ratio of the hypobromite ions to the chloride ions is 0.05 or more and 0.5 or less.
A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein,
Dependencies are inferred from the claim text.