C23C 16/45512
Premixing before introduction in the reaction chamber
Official title: {Premixing before introduction in the reaction chamber}
C23C16/45512 (Premixing before introduction in the reaction chamber) appears on 282 US grants and 384 published applications in this corpus.
Search patents in C23C- Granted patents
- 282
- Published applications
- 384
- Assignees
- 159
- Inventors
- 1,122
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 6 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 5 | 0 |
| 1999 | 5 | 0 |
| 2000 | 6 | 0 |
| 2001 | 6 | 4 |
| 2002 | 3 | 7 |
| 2003 | 4 | 16 |
| 2004 | 5 | 9 |
| 2005 | 8 | 13 |
| 2006 | 4 | 16 |
| 2007 | 3 | 8 |
| 2008 | 6 | 16 |
| 2009 | 4 | 15 |
| 2010 | 16 | 15 |
| 2011 | 7 | 8 |
| 2012 | 10 | 11 |
| 2013 | 11 | 10 |
| 2014 | 7 | 8 |
| 2015 | 13 | 13 |
| 2016 | 9 | 11 |
| 2017 | 7 | 20 |
| 2018 | 9 | 12 |
| 2019 | 14 | 18 |
| 2020 | 13 | 18 |
| 2021 | 13 | 14 |
| 2022 | 12 | 26 |
| 2023 | 12 | 26 |
| 2024 | 9 | 25 |
| 2025 | 16 | 26 |
| 2026 | 15 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Furnace apparatus for crystal production18 Aug 2026US 12,709,819 B2Zadient Technologies SAS
- Method of manufacturing semiconductor device, substrate processing method, non-transitory computer-readable recording medium and substrate processing apparatus16 Jun 2026US 12,658,409 B2Kokusai Electric Corporation
- Method for producing laminate, producing apparatus for laminate, laminate, and semiconductor device16 Jun 2026US 12,660,520 B2Shin-Etsu Chemical Co., Ltd.
- Fluorine-containing amorphous carbon film and method for producing same8 Oct 2026US 2026/0308753 A1Keio University
- Method of manufacturing semiconductor device, substrate processing method, non-transitory computer-readable recording medium and substrate processing apparatus24 Sep 2026US 2026/0290757 A1Kokusai Electric Corporation
- System for providing a precursor mixture to a reaction chamber20 Aug 2026US 2026/0242935 A1ASM IP Holding B. V.
- Precursor delivery system and method for high speed cyclic deposition20 Aug 2026US 2026/0242938 A1Eugenus, Inc.
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus20 Aug 2026US 2026/0242944 A1Kokusai Electric Corporation
Most cited
By later US patents
- Lid assembly for a processing system to facilitate sequential deposition techniques697US 6,878,206 B2APPLIED Materials.Inc. · 2005
- Reactant gas ejector head and thin-film vapor deposition apparatus606US 5,728,223 AEbara Corporation · 1998
- Reactant gas ejector head595US 5,950,925 AEbara Corporation · 1999
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Gas delivery apparatus and method for atomic layer deposition586US 6,916,398 B2APPLIED Materials.Inc. · 2005