C23C 16/28
Deposition of only one other non-metal element
C23C16/28 (Deposition of only one other non-metal element) appears on 104 US grants and 127 published applications in this corpus.
Search patents in C23C- Granted patents
- 104
- Published applications
- 127
- Assignees
- 70
- Inventors
- 296
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 1 |
| 2002 | 0 | 1 |
| 2003 | 3 | 1 |
| 2004 | 1 | 3 |
| 2005 | 0 | 1 |
| 2006 | 2 | 1 |
| 2007 | 1 | 6 |
| 2008 | 2 | 1 |
| 2009 | 0 | 3 |
| 2010 | 3 | 7 |
| 2011 | 2 | 2 |
| 2012 | 4 | 5 |
| 2013 | 5 | 4 |
| 2014 | 4 | 5 |
| 2015 | 9 | 5 |
| 2016 | 3 | 8 |
| 2017 | 3 | 3 |
| 2018 | 5 | 15 |
| 2019 | 10 | 9 |
| 2020 | 6 | 6 |
| 2021 | 3 | 8 |
| 2022 | 5 | 6 |
| 2023 | 4 | 7 |
| 2024 | 3 | 4 |
| 2025 | 3 | 10 |
| 2026 | 2 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Deuterium-containing films28 Apr 2026US 12,616,006 B2APPLIED Materials.Inc.
- Process for direct deposition of graphene or graphene oxide onto a substrate of interest10 Feb 2026US 12,545,996 B2Universite Picardie Jules Verne
- Epitaxial methods including a haloborane formula for growing boron-containing structures having increased boron concentrations14 Oct 2025US 12,444,605 B2APPLIED Materials.Inc.
- Deposition of boron films12 Aug 2025US 12,387,927 B2APPLIED Materials.Inc.
- Method for fabricating semiconductor device with deposition cycles of chemical vapor deposition process to form composite contact structure24 Jun 2025US 12,338,528 B2Nanya Technology Corporation
- Fluorine-containing amorphous carbon film and method for producing same8 Oct 2026US 2026/0308753 A1Keio University
- Oxygen-nitrogen co-doped hollow carbon nanoparticle and preparation method therefor and application in electrosynthesis of hydrogen peroxide14 May 2026US 2026/0132503 A1Zhejiang Epai Technology Co., Ltd
- Method of depositing film23 Apr 2026US 2026/0110080 A1Tokyo Electron Limited
- Methods of epitaxially growing boron-containing structures5 Feb 2026US 2026/0040839 A1APPLIED Materials.Inc.
- Film forming method and film forming apparatus22 Jan 2026US 2026/0022463 A1Tokyo Electron Limited
Most cited
By later US patents
- Selective deposition of metals, metal oxides, and dielectrics527US 9,895,715 B2ASM IP Holding B. V. · 2018
- Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process284US 4,226,898 AEnergy Conversion Devices, Inc. · 1980
- Preparation of group IVA and group VIA compounds38US 7,045,451 B2Rohm and Haas Electronic Materials LLC · 2006
- Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state32US 5,178,905 ACanon Kabushiki Kaisha · 1993
- Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium28US 4,792,460 AElectric Power Research Institute, Inc. · 1988