Process for direct deposition of graphene or graphene oxide onto a substrate of interest
AssigneeUniversite Picardie Jules Verne
InventorsMustapha Jouiad, Mimoun El Marssi, Michael Lejeune
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Abstract
The present invention pertains to a process for direct deposition of graphene oxide onto a substrate of interest from a gaseous source of at least one carbon precursor, using a plasma-enhanced chemical vapor deposition method. It is also directed to a device for implementing this process.
Claims13
A process for depositing graphene or graphene oxide onto a substrate from a gaseous source of at least one carbon precursor, using a plasma-enhanced chemical vapor deposition method, characterized in that the carbon precursor consists of ethylene and in that the process is carried out at a temperature between 18 and 40° C. and in the absence of carrier gas.
Dependencies are inferred from the claim text.