Method of depositing film

Abstract

A method of depositing film, the method includes preparing a substrate on which a plurality of recesses each having an opening with a different width are formed, depositing a silicon-containing film along surfaces of the plurality of recesses, filling the plurality of recesses on which the silicon-containing film is deposited with a carbon-containing film, exposing the silicon-containing film deposited on upper portions of the plurality of recesses from the carbon-containing film by anisotropically etching the carbon-containing film in a thickness direction of the substrate, and removing the silicon-containing film exposed from the carbon-containing film by etching the silicon-containing film using the carbon-containing film as an etching mask.

Dependencies are inferred from the claim text.