Epitaxial methods including a haloborane formula for growing boron-containing structures having increased boron concentrations

A method of epitaxially and selectively growing a structure comprising boron and a Group IV element on a substrate, the method comprising:

• positioning the substrate within a substrate processing chamber, the substrate having a dielectric material and a crystalline material formed thereon, the crystalline material comprising Si, Ge, or a combination thereof;
• heating the substrate at a temperature of 300° C. to 700° C.;
• and
• epitaxially and selectively growing the structure comprising boron and the Group IV element on the crystalline material, comprising:
• flowing a first process gas, a second process gas, and a carrier gas into the substrate processing chamber, wherein:
• the first process gas flows at a flow rate within a range of 1 sccm to 100 sccm, the first process gas comprises a boron-containing gas, and the boron-containing gas consisting of boron trichloride (BCl3);
• the second process gas comprises at least one Group IV element-containing gas;
• and
• the carrier gas comprises H2, N2, or a combination thereof;
• and
• exposing the substrate to the first process gas and the second process gas to epitaxially and selectively grow the structure at a growth rate of 100 Å/min or greater, the structure having a boron concentration of 5×1020 atoms/cm3 or more, wherein the first process gas is flown into the substrate processing chamber and is exposed to the substrate prior to flowing the second process gas into the substrate processing chamber.

A method for epitaxially and selectively growing a structure comprising boron and a Group IV element on a substrate, the method comprising:

• positioning the substrate within a substrate processing chamber, the substrate having a dielectric material and a crystalline material formed thereon;
• heating the substrate to a temperature of 300° C. to 700° C.;
• and
• epitaxially and selectively growing the structure comprising boron and the Group IV element on the crystalline material, comprising:
• flowing a first boron-containing gas into the substrate processing chamber, the first boron-containing gas flowing at a flow rate within a range of 1 sccm to 100 sccm, and the first boron-containing gas consisting of boron trichloride (BCl3);
• exposing the substrate with the first boron-containing gas;
• co-flowing a second boron-containing gas and at least one Group IV element-containing gas into the substrate processing chamber, the first boron-containing gas and the second boron-containing gas being the same;
• and
• exposing the substrate with the second boron-containing gas and the Group IV element-containing gas to epitaxially and selectively grow the structure at a growth rate of 100 Å/min or greater, the structure having a boron concentration of 5×1020 atoms/cm3 or more, wherein the first boron-containing gas is flown into the substrate processing chamber and is exposed to the substrate prior to co-flowing the second boron-containing gas and the at least one Group IV element-containing gas into the substrate processing chamber.