Selective deposition of metals, metal oxides, and dielectrics
AssigneeASM IP Holding B.V.
InventorsSuvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
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Abstract
Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
Claims27
A method for selectively depositing a dielectric material on a first dielectric surface of a substrate relative to a second metal surface of the same substrate, the method comprising:
- at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor comprising Ge, Si or Mg and a second reactant;
- wherein the dielectric material is selected from GeO2, SiO2 and MgO;
- wherein the second metal surface is treated to inhibit deposition of the dielectric material thereon prior to the at least one deposition cycle;
- and
- wherein the dielectric material is selectively deposited on the first dielectric surface relative to the second metal surface with a selectivity of at least 80%.
A method for selectively depositing a material selected from Sb and Ge on a first metal surface of a substrate relative to a second, different surface of the same substrate, the method comprising:
- treating the second surface to provide OH, NHx, or SHx terminations;
- and
- subsequently carrying out at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor comprising Sb or Ge and a second reactant;
- wherein the material selected from Sb and Ge is selectively deposited on the first metal surface relative to the second, different surface with a selectivity of at least 80%.
A method for selectively depositing a metal or metal oxide material on a first dielectric surface of a substrate relative to a second, different surface of the same substrate, the method comprising:
- at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor comprising Ni, Fe or Co and a second reactant, and
- wherein the second, different surface is treated to inhibit deposition of the dielectric material thereon prior to the at least one deposition cycle;
- and
- wherein the metal or metal oxide material is selectively deposited on the first dielectric surface relative to the second, different surface with a selectivity of at least 80%;
- wherein the metal or metal oxide is selected from Ni, Fe, Co, NiOx, FeOx, and CoOx.
Dependencies are inferred from the claim text.