Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
AssigneeElectric Power Research Institute, Inc.
InventorsTing L. Chu, Shirley S. Chu
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Abstract
A process is provided for forming high purity polysilanes or polygermanes by electric discharge wherein the monosilane or monogermane is provided in a gaseous mixture with a carrier gas at atmospheric pressure. The polysilanes or polygermanes produced at atmospheric pressure are further deposited by various means onto a substrate as hydrogenated amorphous silicon or germanium. The polysilane may also be used for the deposition of hydrogenated amorphous silicon alloys.
Claims10
A process for depositing hydrogenated amorphous silicon films onto a substrate comprising the steps of
- producing a gaseous polysilane-containing stream by exposure of a gaseous mixture comprising monosilane and inert gas at substantially atmospheric pressure to electric discharge in a first reaction zone
- and contacting said polysilane-containing stream with said substrate in a second reaction zone separated from said first zone under conditions sufficient to deposit hydrogenated amorphous silicon film thereon.
A process for the deposition of a hydrogenated amorphous silicon alloy onto a substrate comprising the step of contacting a gaseous mixture of polysilane and a hydride or fluoride of one or more other elements which comprise said alloy.
Dependencies are inferred from the claim text.