C23C 16/14
Deposition of only one other metal element
C23C16/14 (Deposition of only one other metal element) appears on 464 US grants and 535 published applications in this corpus.
Search patents in C23C- Granted patents
- 464
- Published applications
- 535
- Assignees
- 134
- Inventors
- 1,023
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 6 | 0 |
| 1992 | 6 | 0 |
| 1993 | 8 | 0 |
| 1994 | 7 | 0 |
| 1995 | 4 | 0 |
| 1996 | 6 | 0 |
| 1997 | 7 | 0 |
| 1998 | 5 | 0 |
| 1999 | 10 | 0 |
| 2000 | 14 | 0 |
| 2001 | 24 | 7 |
| 2002 | 14 | 11 |
| 2003 | 11 | 12 |
| 2004 | 9 | 7 |
| 2005 | 9 | 15 |
| 2006 | 10 | 25 |
| 2007 | 9 | 15 |
| 2008 | 7 | 13 |
| 2009 | 9 | 16 |
| 2010 | 9 | 19 |
| 2011 | 12 | 6 |
| 2012 | 9 | 12 |
| 2013 | 5 | 7 |
| 2014 | 8 | 12 |
| 2015 | 9 | 18 |
| 2016 | 15 | 21 |
| 2017 | 21 | 16 |
| 2018 | 11 | 24 |
| 2019 | 13 | 25 |
| 2020 | 19 | 38 |
| 2021 | 24 | 27 |
| 2022 | 16 | 33 |
| 2023 | 19 | 47 |
| 2024 | 31 | 45 |
| 2025 | 27 | 36 |
| 2026 | 26 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal-on-metal deposition methods for filling a gap feature on a substrate surface8 Sep 2026US 12,729,430 B2ASM IP Holding B. V.
- Conductive structures and methods of forming the same8 Sep 2026US 12,733,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- RF pulsing assisted tungsten-containing film deposition1 Sep 2026US 12,727,407 B2APPLIED Materials.Inc.
- Vapor deposition processes18 Aug 2026US 12,709,802 B2ASM IP Holding B. V.
- Fe—N—C catalysts synthesized by non-contact pyrolysis of gas phase iron11 Aug 2026US 12,706,314 B2Northeastern University
- Conductive structures and methods of forming the same8 Oct 2026US 2026/0314355 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cleancoat and related methods for substrate processing chambers17 Sep 2026US 2026/0279745 A1APPLIED Materials.Inc.
- Seam free molybdenum gap fill10 Sep 2026US 2026/0265906 A1APPLIED Materials.Inc.
- Precursors and methods for depositing metal-containing films3 Sep 2026US 2026/0258546 A1Entegris, Inc.
- Plasma enhanced vapor deposition process and method for forming an elemental antimony film on a substrate27 Aug 2026US 2026/0250837 A1Tokyo Electron Limited
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Selective formation of metallic films on metallic surfaces573US 8,956,971 B2ASM International N.V. · 2015
- Periodic plasma annealing in an ALD-type process543US 7,713,874 B2ASM America, Inc. · 2010
- Selective deposition of metals, metal oxides, and dielectrics527US 9,895,715 B2ASM IP Holding B. V. · 2018
- Post deposition plasma cleaning system and method471US 8,974,868 B2Tokyo Electron Limited · 2015