B81C 2201/0166
By ion implantation
Official title: by ion implantation
B81C2201/0166 (By ion implantation) appears on 9 US grants and 10 published applications in this corpus.
Search patents in B81C- Granted patents
- 9
- Published applications
- 10
- Assignees
- 10
- Inventors
- 23
- Latest grant
- 9 Apr 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 1 |
| 2017 | 1 | 1 |
| 2018 | 1 | 2 |
| 2019 | 0 | 0 |
| 2020 | 1 | 1 |
| 2021 | 1 | 0 |
| 2022 | 1 | 2 |
| 2023 | 0 | 1 |
| 2024 | 1 | 0 |
| 2025 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Modification to rough polysilicon using ion implantation and silicide9 Apr 2024US 11,952,267 B2InvenSense, Inc.
- Modification to rough polysilicon using ion implantation and silicide8 Mar 2022US 11,267,699 B2InvenSense, Inc.
- Method for frequency trimming a microelectromechanical resonator16 Mar 2021US 10,947,111 B2Georgia Tech Research Corporation
- Micromechanical structure and method for manufacturing the same14 Jul 2020US 10,710,874 B2Infineon Technologies AG
- Low-stress low-hydrogen LPCVD silicon nitride17 Jul 2018US 10,026,817 B2Texas Instruments Incorporated
- Method for producing a structure for micro-electromechanical systems9 Jan 2025US 2025/0011228 A1Lpkf Laser & Electronics AG
- Mems microphone and method of manufacturing the same30 Nov 2023US 2023/0382714 A1DB HiTek Co., Ltd.
- Photocurrent noise suppression for mirror assembly13 Oct 2022US 2022/0324698 A1Beijing Voyager Technology Co., Ltd.
- Modification to rough polysilicon using ion implantation and silicide12 May 2022US 2022/0144628 A1InvenSense, Inc.
- Modification to rough polysilicon using ion implantation and silicide27 Aug 2020US 2020/0270123 A1InvenSense, Inc.
Most cited
By later US patents
- Process for the production of accelerometers using silicon on insulator technology78US 5,576,250 ACommissariat A L' Energie Atomique · 1996
- Accelerometers using silicon on insulator technology30US 5,780,885 ACommissariat A L' Energie Atomique · 1998
- Micromechanical structure and method for manufacturing the same8US 10,710,874 B2Infineon Technologies AG · 2020
- Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes4US 6,929,721 B2Trustees of Boston University · 2005