B81C 2201/0139
With the electric potential of an electrochemical etching
Official title: with the electric potential of an electrochemical etching
B81C2201/0139 (With the electric potential of an electrochemical etching) appears on 13 US grants and 15 published applications in this corpus.
Search patents in B81C- Granted patents
- 13
- Published applications
- 15
- Assignees
- 13
- Inventors
- 46
- Latest grant
- 10 Jan 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 1 |
| 2003 | 0 | 2 |
| 2004 | 1 | 2 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 1 | 1 |
| 2014 | 0 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 1 |
| 2017 | 1 | 0 |
| 2018 | 1 | 1 |
| 2019 | 1 | 1 |
| 2020 | 2 | 1 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Enhanced microfabrication using electrochemical techniques10 Jan 2023US 11,549,903 B1National Technology & Engineering Solutions of Sandia, LLC
- Spectrally and temporally engineered processing using photoelectrochemistry4 Aug 2020US 10,734,237 B2The Board of Trustees of the University of Illinois
- Method and system for fabricating a microelectromechanical system device with a movable portion using anodic etching of a sacrificial layer25 Feb 2020US 10,570,011 B1The United States of America as represented by the Secretary of the Navy
- Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess19 Nov 2019US 10,479,675 B2Denso Corporation
- Spectrally and temporally engineered processing using photoelectrochemistry30 Oct 2018US 10,115,599 B2The Board of Trustees of the University of Illinois
- Method for manufacturing microstructures6 Aug 2026US 2026/0231708 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method and System for Fabricating a Microelectromechanical System Device with a Movable Portion Using Anodic Etching of a Sacrificial Layer5 Mar 2020US 2020/0071161 A1The United States of America as represented by the Secretary of the Navy
- Semiconductor device production method24 Jan 2019US 2019/0023563 A1Denso Corporation
- Spectrally and Temporally Engineered Processing using Photoelectrochemistry18 Oct 2018US 2018/0301344 A1The Board of Trustees of the University of Illinois
- Spectrally and Temporally Engineered Processing using Photoelectrochemistry28 Apr 2016US 2016/0118265 A1The Board of Trustees of the University of Illinois
Most cited
By later US patents
- Deposited thin film void-column network materials89US 6,399,177 B1The Penn State Research Foundation · 2002
- Method of producing a semiconductor sensor component6US 7,160,750 B2Robert Bosch GmbH · 2007
- Method for manufacturing capacitive electromechanical transducer6US 8,426,235 B2Canon Kabushiki Kaisha · 2013
- Method for producing diaphragm sensor unit and diaphragm sensor unit3US 6,759,265 B2Robert Bosch GmbH · 2004
- Spectrally and temporally engineered processing using photoelectrochemistry2US 10,115,599 B2The Board of Trustees of the University of Illinois · 2018