Semiconductor device production method
AssigneeDenso Corporation
InventorsAkira OGAWA, Yoshitaka NODA, Tetsuo YOSHIOKA, Yuhei SHIMIZU
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Abstract
A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.
Claims10
A semiconductor device production method, comprising:
- performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed, wherein
- in the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and
- the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.
Dependencies are inferred from the claim text.