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US 7,160,750 B2Granted
Method of producing a semiconductor sensor component
AssigneeRobert Bosch GmbH
InventorsHubert Benzel, Heribert Weber, Frank Schaefer
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Abstract
A method for manufacturing a semiconductor component, such as, for example, a multilayer semiconductor component including a micromechanical component, such as, for example, a heat transfer sensor having a semiconductor substrate of silicon, and a sensor region. For inexpensive manufacture of a thermal insulation between the semiconductor substrate and the sensor region a porous layer is provided in the semiconductor component.
Claims18
A method for manufacturing a semiconductor component having a semiconductor substrate and a sensor region, the method comprising:
- forming a first porous layer to thermally insulate the sensor region at least partially from the semiconductor substrate;
- forming a second porous layer having a porosity of more than approximately 70% and less than 100%, beneath the first porous layer;
- and
- heating the second porous layer to form one of a cavity and a cavern beneath the first porous layer.
1 more element
Dependencies are inferred from the claim text.