Y10S 438/954
Making oxide-nitride-oxide device
Y10S438/954 (Making oxide-nitride-oxide device) appears on 246 US grants and 150 published applications in this corpus.
Search patents in Y10S- Granted patents
- 246
- Published applications
- 150
- Assignees
- 92
- Inventors
- 412
- Latest grant
- 19 Aug 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 5 | 0 |
| 1997 | 8 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 10 | 0 |
| 2001 | 12 | 4 |
| 2002 | 19 | 17 |
| 2003 | 18 | 16 |
| 2004 | 27 | 24 |
| 2005 | 12 | 24 |
| 2006 | 35 | 18 |
| 2007 | 18 | 17 |
| 2008 | 10 | 14 |
| 2009 | 16 | 9 |
| 2010 | 10 | 3 |
| 2011 | 9 | 3 |
| 2012 | 8 | 1 |
| 2013 | 1 | 0 |
| 2014 | 3 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- High performance CMOS transistors using PMD liner stress19 Aug 2014US 8,809,141 B2Texas Instruments Incorporated
- Methods of forming reverse mode non-volatile memory cell structures12 Aug 2014US 8,802,526 B2Micron Technology, Inc.
- Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element11 Mar 2014US 8,669,666 B2Infineon Technologies AG
- Self aligned narrow storage elements for advanced memory device2 Jul 2013US 8,476,695 B2Spansion LLC
- Planarized passivation layer for semiconductor devices11 Sep 2012US 8,264,088 B2Globalfoundries Singapore Pte. Ltd.
- Methods of forming reverse mode non-volatile memory cell structures28 Jun 2012US 2012/0164804 A1Micron Technology, Inc.
- Planarized passivation layer for semiconductor devices3 Nov 2011US 2011/0266688 A1Globalfoundries Singapore Pte. Ltd.
- Dual charge storage node memory device and methods for fabricating such device21 Jul 2011US 2011/0175158 A1Spansion LLC
- Method of Processing a Contact Pad, Method of Manufacturing a Contact Pad, and Integrated Circuit Element10 Feb 2011US 2011/0031625 A1Infineon Technologies AG
- Modification of charge trap silicon nitride with oxygen plasma28 Oct 2010US 2010/0270609 A1APPLIED Materials.Inc.
Most cited
By later US patents
- NROM fabrication method201US 6,297,096 B1Saifun Semiconductors Ltd. · 2001
- Use of high-K dielectric material in modified ONO structure for semiconductor devices174US 6,642,573 B1Advanced Micro Devices, Inc. · 2003
- Four-bit FinFET NVRAM memory device135US 7,091,551 B1International Business Machines Corporation · 2006
- Method for producing recessed field oxide with improved sidewall characteristics124US 4,746,630 AHewlett-Packard Company · 1988
- Method of manufacturing capacitor101US 4,990,463 AKabushiki Kaisha Toshiba · 1991