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US 8,264,088 B2Granted
Planarized passivation layer for semiconductor devices
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsSin Leng Lim, In Ki Kim, Jong Sung Park, Min Hwan Kim, Wei Lu
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Abstract
A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.
Claims13
A device comprising:
- a substrate with a device layer having a trench opening;
- a first sublayer over a top surface of the device layer;
- a fill layer to fill the opening, wherein a top surface of a fill material of the fill layer is substantially planar with a top surface of the first sublayer;
- and
- a second sublayer, wherein the second sublayer lines a bottom and sidewalls of the trench opening and the second sublayer in the trench is recessed below the top surface of the first sublayer and the top surface of the fill material.
2 more elements
Dependencies are inferred from the claim text.