Method of manufacturing capacitor
AssigneeKabushiki Kaisha Toshiba
InventorSeiichi Mori
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Abstract
In the invention, the thin natural oxide film formed on a surface of a first polycrystalline silicon layer containing an impurity diffused at a high concentration is transformed into a silicon nitride film by rapid nitriding. When the resultant structure is placed in a low-pressure CVD furnace to deposit a silicon nitride film, no natural oxide film is grown on the polycrystalline silicon layer. Hence, when the invention is applied to manufacture of a capacitor for a memory cell, the inter-layer insulative film of the capacitor is not too thick. As a result, a reliable capacitor suitable for micropatterning of elements can be formed between the first and second polycrystalline silicon layers.
Claims13
A method of manufacturing a capacitor, comprising:
- a first step of nitriding a surface of a first conductive layer, to form a first nitride or oxynitride film;
- a second step of depositing a second nitride film on a surface of said first nitride film;
- a third step of forming an insulating film on a surface of said second nitride film;
- and
- a fourth step of depositing a second conductive layer on a surface of said insulating film.
A method of manufacturing a capacitor, comprising the steps of:
- forming a first silicon oxide film on a surface of a silicon semiconductor substrate of a first conductivity type;
- depositing a first polycrystalline silicon layer on said first silicon oxide film;
- doping an impurity of a second conductivity type into said first polycrystalline silicon layer;
- forming a first silicon nitride or oxynitride film by nitriding a surface of said first polycrystalline silicon layer;
- depositing a second silicon nitride film on said first silicon nitride film;
- forming a second silicon oxide film on said second silicon nitride film;
- depositing a second polycrystalline silicon layer on said second silicon oxide film;
- and
- doping an impurity of the second conductivity type into said second polycrystalline silicon layer.
A method of manufacturing a capacitor, comprising the steps of:
- forming a groove in a semiconductor substrate of a first conductivity type;
- forming a first oxide film on an entire inner surface of said groove;
- depositing a first impurity layer of a second conductivity type on said first oxide film;
- forming a first nitride or oxynitride film by nitriding a surface of said first impurity layer;
- depositing a second nitride film on said first nitride film;
- forming a second oxide film on a surface of said second nitride film;
- and
- depositing a second impurity layer of the second conductivity type on said second oxide film.
Dependencies are inferred from the claim text.