Method of Processing a Contact Pad, Method of Manufacturing a Contact Pad, and Integrated Circuit Element

An integrated circuit comprising:

• a metallization layer overlying a semiconductor workpiece;
• a via surrounded by an electrically insulating region, the via overlying the metallization layer;
• a contact pad region overlying the via such that the via electrically couples the metallization layer and the contact pad region;
• an electrically insulating layer overlying the electrically insulating region, wherein the contact pad region is embedded in the electrically insulating layer;
• a passivation layer overlying the electrically insulating layer but not overlying the contact pad region;
• and
• an adhesion layer overlying portions of the passivation layer that are not proximate the contact pad region, wherein the passivation layer has a first thickness in the portions that underlie the adhesion layer and a second thickness in remaining portions that are proximate the contact pad region, the first thickness being greater than the second thickness.

An integrated circuit comprising:

• an electrically insulating layer;
• a contact pad region that is embedded in the electrically insulating layer such that a top surface of the contact pad region is substantially co-planar with a top surface of the electrically insulating layer;
• a passivation layer stack overlying the electrically insulating layer but not overlying the contact pad region such that edges of the passivation layer stack are adjacent the contact pad region, the passivation layer stack including a first passivation layer and a second passivation layer that overlies the first passivation layer;
• an adhesion layer overlying the passivation layer stack but spaced from the contact pad region by a lateral distance of at least one micron;
• and
• a reinforcement layer stack overlying the contact pad region, a top surface of the reinforcement layer stack is substantially co-planar with a top surface of the passivation layer stack.