Y10S 438/926
Dummy metallization
Y10S438/926 (Dummy metallization) appears on 290 US grants and 181 published applications in this corpus.
Search patents in Y10S- Granted patents
- 290
- Published applications
- 181
- Assignees
- 91
- Inventors
- 418
- Latest grant
- 7 May 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 9 | 0 |
| 1996 | 8 | 0 |
| 1997 | 8 | 0 |
| 1998 | 12 | 0 |
| 1999 | 17 | 0 |
| 2000 | 11 | 0 |
| 2001 | 18 | 10 |
| 2002 | 23 | 18 |
| 2003 | 13 | 11 |
| 2004 | 16 | 15 |
| 2005 | 16 | 15 |
| 2006 | 6 | 21 |
| 2007 | 20 | 19 |
| 2008 | 13 | 11 |
| 2009 | 10 | 12 |
| 2010 | 19 | 8 |
| 2011 | 18 | 12 |
| 2012 | 6 | 6 |
| 2013 | 9 | 3 |
| 2014 | 5 | 5 |
| 2015 | 3 | 2 |
| 2016 | 3 | 4 |
| 2017 | 2 | 2 |
| 2018 | 5 | 3 |
| 2019 | 2 | 2 |
| 2020 | 1 | 1 |
| 2021 | 2 | 1 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for fabricating transistor with thinned channel7 May 2024US 11,978,799 B2Tahoe Research, Ltd.
- Method for fabricating transistor with thinned channel2 Mar 2021US 10,937,907 B2Intel Corporation
- Semiconductor device23 Feb 2021US 10,930,635 B2Seiko Epson Corporation
- Semiconductor device9 Jun 2020US 10,679,979 B2Seiko Epson Corporation
- Method for fabricating transistor with thinned channel30 Jul 2019US 10,367,093 B2
- Method for fabricating transistor with thinned channel6 May 2021US 2021/0135007 A1Intel Corporation
- Semiconductor device13 Aug 2020US 2020/0258877 A1Seiko Epson Corporation
- Method for fabricating transistor with thinned channel5 Dec 2019US 2019/0371940 A1Intel Corporation
- Semiconductor device31 Jan 2019US 2019/0035776 A1Seiko Epson Corporation
- Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same12 Jul 2018US 2018/0197954 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of forming a metal oxide dielectric446US 7,326,656 B2Intel Corporation · 2008
- Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same284US 6,831,292 B2AmberWave Systems Corporation · 2004
- Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material172US 7,531,437 B2Intel Corporation · 2009
- Method of automatically generating dummy metals for multilevel interconnection133US 5,798,298 AUnited Microelectronics Corp. · 1998
- Metal gate transistors with epitaxial source and drain regions132US 7,332,439 B2Intel Corporation · 2008