Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material

A method of forming a semiconductor device comprising:

• forming a sacrificial gate electrode material on a sacrificial gate dielectric layer over and around a semiconductor body having a top surface and a pair of laterally opposite sidewalls;
• forming a hard mask material on said sacrificial gate electrode material;
• patterning said sacrificial gate electrode material and said hard mask material into a hard mask and a sacrificial gate electrode wherein the portion of said semiconductor body beneath said sacrificial gate electrode defines a channel region of said semiconductor body;
• forming a dielectric layer over and around said sacrificial gate electrode and said hard mask;
• planarizing said dielectric layer until said hard mask is exposed and said dielectric layer is substantially planar with the top surface of said hard mask to form a planarized dielectric;
• etching away said hard mask to reveal said sacrificial gate electrode;
• etching away said sacrificial gate electrode to form an opening in said planarized dielectric layer to expose said sacrificial gate dielectric layer;
• removing said sacrificial gate dielectric layer with an etchant to expose said channel region of said semiconductor body, wherein said etchant makes the surface of said channel region of said semiconductor body into a hydrophobic surface;
• converting said hydrophobic surface of said channel region into a hydrophilic surface;
• depositing a gate dielectric layer on said top surface and sidewalls of said hydrophilic surface of said channel region of said semiconductor body in said opening and on said top surface of said planarized dielectric;
• blanket depositing a gate electrode material on said gate dielectric layer in said opening and on said gate dielectric layer on said dielectric layer;
• and
• polishing said gate electrode material on said gate dielectric layer until said gate electrode material and said gate dielectric layer are completely removed from the top surface of said dielectric layer to form a gate electrode and a gate dielectric layer.