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US 10,367,093 B2Granted
Method for fabricating transistor with thinned channel
OwnerJustin K. Brask, Robert S. Chau +7inventors
InventorsJustin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros, Amlan Majumdar, Matthew V. Metz, Marko Radosavljevic
Life of this patent
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Abstract
A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.
Claims20
An apparatus comprising:
- a substrate comprising Si;
- a fin comprising Si on the substrate;
- a gate electrode having a work function metal comprising:
- W, Ta, Ti, and N;
- a first spacer;
- a second spacer, wherein the first and second spacers comprise N;
- a gate dielectric between:
- the gate electrode and the fin, the gate electrode and the first spacer, and the gate electrode and the second spacer, wherein the gate dielectric comprises Hf and O,
- a source;
- and
- a drain;
- wherein:
- a portion of the fin under the gate electrode has a first width,
- a portion of the fin outside the gate electrode and closer to the drain or source regions has a second width, and
- the second width is greater than the first width.
12 more elements
A method comprising:
- forming a substrate comprising Si;
- forming a fin comprising Si formed on the substrate;
- forming a gate electrode formed of a work function metal comprising:
- W, Ta, Ti, and N;
- forming a first spacer;
- forming a second spacer, wherein the first and second spacers comprise N;
- forming a gate dielectric between:
- the gate electrode and the fin, the gate electrode and the first spacer, and the gate electrode and the second spacer, wherein the gate dielectric comprises Hf and O;
- forming a source;
- and
- forming a drain;
- wherein:
- a portion of the fin under the gate electrode has a first width,
- a portion of the fin outside the gate electrode and closer to the drain or source regions has a second width, and
- the second width is greater than the first width.
12 more elements
An apparatus comprising:
- a substrate comprising Si;
- a fin comprising Si on the substrate;
- a gate electrode comprising:
- W, Ta, Ti, and N;
- a first spacer;
- a second spacer, wherein the first and second spacers comprise N;
- a gate dielectric between:
- the gate electrode and the fin, the gate electrode and the first spacer, and the gate electrode and the second spacer, wherein the gate dielectric comprises Hf and O,
- a source;
- and
- a drain;
- wherein a portion of the fin between the source and drain is thinner than outside of the source and drain.
9 more elements
Dependencies are inferred from the claim text.