H10W 20/482
For individual devices provided for in groups h10d8/00 - h10d48/00
Official title: {for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors}
H10W20/482 (For individual devices provided for in groups h10d8/00 - h10d48/00) appears on 1,209 US grants and 1,162 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,209
- Published applications
- 1,162
- Assignees
- 354
- Inventors
- 2,202
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 4 | 0 |
| 1983 | 3 | 0 |
| 1984 | 2 | 0 |
| 1985 | 6 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 5 | 0 |
| 1991 | 10 | 0 |
| 1992 | 6 | 0 |
| 1993 | 5 | 0 |
| 1994 | 10 | 0 |
| 1995 | 5 | 0 |
| 1996 | 15 | 0 |
| 1997 | 28 | 0 |
| 1998 | 18 | 0 |
| 1999 | 16 | 0 |
| 2000 | 26 | 0 |
| 2001 | 20 | 3 |
| 2002 | 17 | 19 |
| 2003 | 13 | 16 |
| 2004 | 24 | 25 |
| 2005 | 20 | 26 |
| 2006 | 17 | 24 |
| 2007 | 10 | 17 |
| 2008 | 16 | 24 |
| 2009 | 11 | 20 |
| 2010 | 18 | 22 |
| 2011 | 25 | 30 |
| 2012 | 19 | 48 |
| 2013 | 42 | 47 |
| 2014 | 57 | 66 |
| 2015 | 64 | 81 |
| 2016 | 63 | 70 |
| 2017 | 78 | 67 |
| 2018 | 52 | 61 |
| 2019 | 77 | 42 |
| 2020 | 68 | 74 |
| 2021 | 51 | 79 |
| 2022 | 52 | 76 |
| 2023 | 51 | 79 |
| 2024 | 55 | 73 |
| 2025 | 55 | 48 |
| 2026 | 39 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Group III nitride Doherty amplifier using different epitaxial structures29 Sep 2026US 12,750,010 B2MACOM Technology Solutions Holdings, Inc.
- Structure with self-aligned offset gate contact and direct backside contact8 Sep 2026US 12,733,240 B2International Business Machines Corporation
- Semiconductor device and method of manufacturing semiconductor device25 Aug 2026US 12,720,799 B2Fuji Electric Co., Ltd.
- Air bridge structure and manufacturing method thereof, and superconducting quantum chip and manufacturing method thereof11 Aug 2026US 12,707,962 B2Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano) , Chinese Academy of Sciences
- Leaded package using routing layer for integrated circuit die11 Aug 2026US 12,708,004 B2Infineon Technologies Canada Inc.
- Scalable circuit-under-pad device topologies for lateral gan power transistors1 Oct 2026US 2026/0304868 A1GaN Systems Inc.
- Transistor with active area under gate runner27 Aug 2026US 2026/0255653 A1Semiconductor Components Industries, LLC
- Vertical trench gate fet with split gate20 Aug 2026US 2026/0247663 A1
- Rf amplifier devices and methods of manufacturing including modularized designs with flip chip interconnections and integration into packaging6 Aug 2026US 2026/0230051 A1Wolfspeed, Inc.
- Transistor gate runner topology16 Jul 2026US 2026/0206570 A1Semiconductor Components Industries, LLC
Most cited
By later US patents
- Method of forming a semiconductor structure having an air region510US 5,324,683 AMotorola, Inc. · 1994
- Semiconductor device having a hollow around a gate electrode and a method for producing the same480US 5,559,046 AMatsushita Electronics Corporation · 1996
- Vertical power mosfet having thick metal layer to reduce distributed resistance258US 5,665,996 ASiliconix Incorporated · 1997
- Micro assembled LED displays and lighting elements254US 9,520,537 B2X-Celeprint Limited · 2016
- ESD protection structure using LDMOS diodes with thick copper interconnect179US 5,468,984 ATexas Instruments Incorporated · 1995