H10W 20/098
By filling between adjacent conductive parts
Official title: {by filling between adjacent conductive parts}
H10W20/098 (By filling between adjacent conductive parts) appears on 1,123 US grants and 1,178 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,123
- Published applications
- 1,178
- Assignees
- 192
- Inventors
- 2,287
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 9 | 0 |
| 1998 | 19 | 0 |
| 1999 | 11 | 0 |
| 2000 | 34 | 0 |
| 2001 | 37 | 18 |
| 2002 | 41 | 46 |
| 2003 | 42 | 36 |
| 2004 | 37 | 40 |
| 2005 | 29 | 51 |
| 2006 | 37 | 50 |
| 2007 | 30 | 31 |
| 2008 | 31 | 40 |
| 2009 | 28 | 29 |
| 2010 | 28 | 30 |
| 2011 | 34 | 17 |
| 2012 | 9 | 19 |
| 2013 | 22 | 16 |
| 2014 | 26 | 36 |
| 2015 | 33 | 39 |
| 2016 | 29 | 33 |
| 2017 | 43 | 49 |
| 2018 | 49 | 49 |
| 2019 | 43 | 61 |
| 2020 | 65 | 90 |
| 2021 | 60 | 80 |
| 2022 | 53 | 63 |
| 2023 | 54 | 83 |
| 2024 | 68 | 82 |
| 2025 | 65 | 66 |
| 2026 | 41 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same6 Oct 2026US 12,757,738 B2Nanya Technology Corporation
- Methods and systems for topography-selective depositions29 Sep 2026US 12,751,229 B2ASM IP Holding B. V.
- Semiconductor device structure with dielectric liner portions and method for preparing the same29 Sep 2026US 12,751,282 B2Nanya Technology Corporation
- Semiconductor structure including lines of different height22 Sep 2026US 12,745,616 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with filling layer and method for fabricating the same15 Sep 2026US 12,740,402 B2Nanya Technology Corporation
- Doping free connection structures and methods8 Oct 2026US 2026/0314361 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same24 Sep 2026US 2026/0293654 A1Samsung Electronics Co., Ltd.
- Semiconductor device with filling layer and method for fabricating the same24 Sep 2026US 2026/0293660 A1Nanya Technology Corporation
- Semiconductor device with filling layer and method for fabricating the same24 Sep 2026US 2026/0293661 A1Nanya Technology Corporation
- Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same24 Sep 2026US 2026/0293687 A1Nanya Technology Corporation
Most cited
By later US patents
- Anisotropic deposition of silicon dioxide805US 5,013,691 AAT&T Bell Laboratories · 1991
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Method and system for improving dielectric film quality for void free gap fill649US 7,541,297 B2APPLIED Materials.Inc. · 2009
- CVD flowable gap fill587US 7,582,555 B1Novellus Systems, Inc. · 2009
- Methods for forming a dielectric layer within trenches576US 7,803,722 B2APPLIED Materials.Inc. · 2010