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US 2026/0293687 A1Published application
Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same
AssigneeNanya Technology Corporation
InventorFENG-WEN HSU
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Abstract
A semiconductor device is provided, which includes a substrate, a first dielectric layer, a conductive layer, and an insulating capping layer. The first dielectric layer is disposed on the substrate. The conductive layer is disposed on the first dielectric layer. The conductive layer includes a plurality of conductive wires. The insulating capping layer is disposed on the conductive layer, and configured to enclose a plurality of first gaps between the conductive wires to form a plurality of air spacers.
Claims8
A method for fabricating a semiconductor device, comprising:
- providing a semiconductor structure having a conductive layer disposed on a first top surface of a lower portion of a first dielectric layer;
- etching an upper portion of the first dielectric layer to expose conductive wires of the conductive layer;
- and
- forming an insulating capping layer on a second top surface of the conductive layer to form a plurality of air spacers.
1 more element
Dependencies are inferred from the claim text.