H10P 90/14
By setting crystal orientation
Official title: {by setting crystal orientation}
H10P90/14 (By setting crystal orientation) appears on 41 US grants and 52 published applications in this corpus.
Search patents in H10P- Granted patents
- 41
- Published applications
- 52
- Assignees
- 33
- Inventors
- 113
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 3 |
| 2007 | 2 | 1 |
| 2008 | 2 | 7 |
| 2009 | 0 | 2 |
| 2010 | 1 | 1 |
| 2011 | 1 | 2 |
| 2012 | 4 | 1 |
| 2013 | 2 | 2 |
| 2014 | 1 | 2 |
| 2015 | 1 | 0 |
| 2016 | 3 | 1 |
| 2017 | 1 | 2 |
| 2018 | 1 | 1 |
| 2019 | 0 | 4 |
| 2020 | 2 | 0 |
| 2021 | 1 | 5 |
| 2022 | 2 | 7 |
| 2023 | 0 | 3 |
| 2024 | 6 | 2 |
| 2025 | 1 | 2 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Group-III element nitride semiconductor substrate25 Aug 2026US 12,721,056 B2NGK Insulators, Ltd.
- Chamfered silicon carbide substrate and method of chamfering21 Apr 2026US 12,610,792 B2SiCrystal GmbH
- Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure7 Apr 2026US 12,595,588 B2Sumitomo Chemical Company, Limited
- Method for forming a handling substrate for a composite structure intended for RF applications and handling substrate15 Jul 2025US 12,362,226 B2Soitec
- Channel mobility improvement29 Oct 2024US 12,132,082 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Monocrystalline silicon wafer and forming method therefor20 Aug 2026US 2026/0247932 A1Shanghai Institute of Microsystem and Info. Tech., Chinese Academy of Sciences
- Laser processing apparatus and laser processing method30 Apr 2026US 2026/0115837 A1Disco Corporation
- Cylindrical grinding device, cylindrical grinding method, and wafer manufacturing method1 Jan 2026US 2026/0001186 A1Sumco Corporation
- Wafer processing method, ingot processing method, and wafer27 Nov 2025US 2025/0364241 A1Disco Corporation
- Method of manufacturing semiconductor devices19 Jun 2025US 2025/0203872 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method for obtaining a wafer in semiconducting material of large dimensions and use of the resulting wafer for producing substrates of the semiconductor on insulator type14US 6,059,877 ACommisariat a l'Energie Atomique · 2000
- Semiconductor wafer and manufacturing method thereof14US 7,291,542 B2Renesas Technology Corp. · 2007
- Silicon semiconductor substrate and its manufacturing method12US 7,411,274 B2Shin-Etsu Handotai Co., Ltd. · 2008
- Method of making a semiconductor wafer9US 4,127,969 ASony Corporation · 1978
- Method for manufacturing completely circular semiconductor wafers7US 5,927,263 ANEC Corporation · 1999