Chamfered silicon carbide substrate and method of chamfering

A method of chamfering a peripheral region around a circumference of a monocrystalline wafer-shaped silicon carbide substrate, so that a surface of the chamfered peripheral region includes a bevel angle with a main surface of the substrate, wherein a normal vector ({right arrow over (O)}) of the main surface includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane of the substrate, the method comprising the following steps:

• measuring an orientation of the basal lattice plane of the substrate with respect to the main surface of the substrate, thereby measuring a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate;
• determining the bevel angle for the peripheral region that is to be chamfered, depending on the tilt angle of the main surface, so that, in more than 75% of the circumference of the peripheral region, normal vectors of the chamfered peripheral region differ from the normal vector of the basal lattice plane by less than the measured difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate;
• and
• after the measuring and determining steps, working the substrate to form the chamfered peripheral region around at least 95% of the circumference of the substrate, the chamfered peripheral region having the determined bevel angle;
• wherein the tilt angle is measured at one location or a plurality of locations around the circumference of the substrate, and
• wherein the bevel angle is varied around the circumference of the substrate, depending on the measured tilt angle.