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US 4,127,969 AGranted
Method of making a semiconductor wafer
AssigneeSony Corporation
InventorsKinji Hoshi, Kazuhiro Sugita
Life of this patent
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Abstract
Semiconductor wafers with apertures, that may include crystal orientation surfaces, are made by boring semiconductor ingots and slicing the bored ingots perpendicular to the bore or at an angle thereto. Novel means are provided for handling the wafers without scratching the major surfaces thereof, for supporting the slices to clean them, and for supporting the slices to coat the major surfaces.
Claims12
The method of making a semi-conductor wafer, said method comprising the steps of:
- mounting on a rod a semi-conductor ingot having a longitudinal hole extending at least part way longitudinally through said ingot;
- temporarily adherently joining said ingot to said rod to form a unitary structure without slippage between said ingot and said rod;
- providing relative rotation between said unitary structure and a cutting edge to slice said ingot through to said hole from all radial directions to form a wafer having smooth surfaces, said wafer still being adherently attached to said rod after both main surfaces of said wafer have been formed by such slicing;
- and subsequently removing said wafer from said rod.
1 more element
Dependencies are inferred from the claim text.