Method for obtaining a wafer in semiconducting material of large dimensions and use of the resulting wafer for producing substrates of the semiconductor on insulator type
AssigneeCommisariat a l'Energie Atomique
InventorMichel Bruel
Life of this patent
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Abstract
A process for obtaining at least one wafer of semiconducting material, including the step of cutting an ingot of semiconducting material along a longitudinal plane of the ingot to obtain a wafer with large dimensions. The wafer obtained may be used to make a Semiconductor on Insulator type substrate, for example a Silicon On Insulator substrate.
Claims26
A process of manufacturing at least one silicon wafer, comprising:
- cutting a silicon ingot along a longitudinal plane of the silicon ingot, wherein said longitudinal plane is parallel or approximately parallel to a crystallographic plane within the silicon ingot.
A process of manufacturing wafers of a semiconducting material, comprising:
- cutting an ingot of semiconducting material along a longitudinal plane of the ingot, wherein said ingot is cut into two groups of wafers, the wafers in one group being parallel to each other and perpendicular to the wafers in the other group.
A process for manufacturing at least one wafer of a semiconducting material, comprising:
- cutting an ingot of semiconducting material along a longitudinal plane of the ingot, said longitudinal plane being parallel or approximately parallel to a crystallographic plane within the ingot of semiconducting material;
- and
- performing an epitaxy after cutting the ingot in order to reconstitute all or part of the thickness of the cut wafer.
In a process of manufacturing a semiconductor on insulator substrate, the improvement comprising):
- manufacturing a wafer, comprising,
- cutting an ingot of semiconducting material along a longitudinal plane of the ingot, said longitudinal plane being parallel or approximately parallel to a crystallographic plane within the ingot of semiconducting material, and
- performing an epitaxy after cutting the ingot in order to reconstitute all or part of the thickness of the cut wafer.
In a process of manufacturing a semiconductor on insulator substrate, the improvement comprising:
- manufacturing a silicon wafer, comprising,
- cutting a silicon ingot along a longitudinal plane of the silicon ingot, wherein said longitudinal plane is parallel or approximately parallel to a crystallographic plane within the silicon ingot.
In a process of manufacturing a semiconductor on insulator substrate, the improvement comprising:
- manufacturing a wafer, comprising,
- cutting an ingot of semiconducting material along a longitudinal plane of the ingot, wherein said ingot is cut into two groups of wafers, the wafers in one group being parallel to each other and perpendicular to the wafers in the other group.
Dependencies are inferred from the claim text.