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US 12,132,082 B2Granted
Channel mobility improvement
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Wei Lee, Yasutoshi Okuno, Pang-Yen Tsai
Life of this patent
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Abstract
A semiconductor device according to the present disclosure includes a substrate including a plurality of atomic steps that propagate along a first direction, and a transistor disposed on the substrate. The transistor includes a channel member extending a second direction perpendicular to the first direction, and a gate structure wrapping around the channel member.
Claims20
A semiconductor device, comprising:
- a substrate comprising a plurality of atomic steps that propagate along a first direction;
- and
- a transistor disposed on the substrate, wherein the transistor comprises:
- a channel member extending lengthwise along a second direction perpendicular to the first direction, and
- a gate structure wrapping around the channel member.
2 more elements
A semiconductor structure, comprising:
- a silicon substrate comprising a plurality of atomic steps that propagate along a first direction;
- and
- a plurality of transistors disposed over the silicon substrate, each of the plurality of transistors comprises:
- an active region disposed over the silicon substrate and extending lengthwise along a second direction perpendicular to the first direction, and
- a gate structure wrapping over the active region and extending lengthwise along the first direction,
- wherein the active region comprises a plurality of channel members vertically stacked one over another,
- wherein the gate structure wraps around each of the plurality of channel members.
4 more elements
A semiconductor structure, comprising:
- a silicon substrate comprising a plurality of atomic steps propagating along a first direction;
- and
- a multi-gate transistor comprising:
- a first source/drain feature and a second source/drain feature disposed over the silicon substrate,
- a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a second direction perpendicular to the first direction, and
- a gate structure wrapping around each of the vertical stack of channel members.
3 more elements
Dependencies are inferred from the claim text.