H10P 36/03
Within silicon bodies
Official title: {within silicon bodies}
H10P36/03 (Within silicon bodies) appears on 908 US grants and 696 published applications in this corpus.
Search patents in H10P- Granted patents
- 908
- Published applications
- 696
- Assignees
- 258
- Inventors
- 1,485
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 6 | 0 |
| 1982 | 6 | 0 |
| 1983 | 7 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 10 | 0 |
| 1987 | 7 | 0 |
| 1988 | 4 | 0 |
| 1989 | 12 | 0 |
| 1990 | 8 | 0 |
| 1991 | 11 | 0 |
| 1992 | 11 | 0 |
| 1993 | 13 | 0 |
| 1994 | 11 | 0 |
| 1995 | 18 | 0 |
| 1996 | 14 | 0 |
| 1997 | 7 | 0 |
| 1998 | 17 | 0 |
| 1999 | 30 | 0 |
| 2000 | 34 | 0 |
| 2001 | 26 | 12 |
| 2002 | 37 | 29 |
| 2003 | 35 | 37 |
| 2004 | 24 | 18 |
| 2005 | 18 | 36 |
| 2006 | 26 | 24 |
| 2007 | 21 | 35 |
| 2008 | 22 | 25 |
| 2009 | 19 | 36 |
| 2010 | 24 | 28 |
| 2011 | 27 | 24 |
| 2012 | 25 | 31 |
| 2013 | 29 | 18 |
| 2014 | 29 | 32 |
| 2015 | 24 | 29 |
| 2016 | 38 | 40 |
| 2017 | 31 | 39 |
| 2018 | 20 | 31 |
| 2019 | 41 | 21 |
| 2020 | 28 | 32 |
| 2021 | 30 | 36 |
| 2022 | 20 | 23 |
| 2023 | 22 | 21 |
| 2024 | 16 | 20 |
| 2025 | 22 | 12 |
| 2026 | 5 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Processing method of bonded wafer25 Aug 2026US 12,721,072 B2Disco Corporation
- Detachable temporary substrate compatible with very high temperatures and process for transferring a working layer from the substrate28 Apr 2026US 12,615,998 B2Soitec
- Method for manufacturing group III nitride semiconductor substrate14 Apr 2026US 12,604,680 B2Sumco Corporation
- Method for producing a semiconductor structure comprising an interface region including agglomerates7 Apr 2026US 12,598,923 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Contaminant collection on SOI17 Feb 2026US 12,557,380 B2Texas Instruments Incorporated
- Production method of semiconductor device17 Sep 2026US 2026/0282554 A1Tokyo Electron Limited
- Method for producing a semiconductor structure comprising an interface region including agglomerates6 Aug 2026US 2026/0231696 A1Commissariat à I' énergie atomique et aux énergies alternatives
- Contaminant collection on soi25 Jun 2026US 2026/0182025 A1Texas Instruments Incorporated
- Method for treating substrates25 Jun 2026US 2026/0182276 A1
- Methods for maintaining stable high resistivity of soi wafers25 Jun 2026US 2026/0182459 A1Murata Manufacturing Co., Ltd.
Most cited
By later US patents
- Method for producing semiconductor substrate513US 5,854,123 ACanon Kabushiki Kaisha · 1998
- Process for fabricating thin film transistor433US 5,529,937 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Single-etch stop process for the manufacture of silicon-on-insulator wafers308US 5,937,312 ASiBond, L.L.C. · 1999
- Process for producing semiconductor article271US 5,966,620 ACanon Kabshiki Kaisha · 1999
- Semiconductor device and method of manufacturing the same204US 6,365,933 B1Semiconductor Energy Laboratory Co.Ltd. · 2002