Process for producing semiconductor article
AssigneeCanon Kabshiki Kaisha
InventorsKiyofumi Sakaguchi, Takao Yonehara
Life of this patent
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Abstract
A novel process for producing a semiconductor article is disclosed which comprises the steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.
Claims52
A process for producing a semiconductor article comprising steps of preparing a first substrate comprised of a silicon substrate, an epitaxial semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate, wherein said silicon substrate is not a porous region, and the epitaxial semiconductor layer, wherein said epitaxial semiconductor layer is not a porous region bonding the first substrate to a second substrate to obtain a multiple layer structure with the epitaxial semiconductor layer placed inside;
- and separating the multiple layer structure at the ion implantation layer.
A process for producing a semiconductor article comprising steps of preparing a first substrate comprised of a silicon substrate, an epitaxial semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate, wherein said silicon substrate is not a porous region, and the epitaxial semiconductor layer, wherein said epitaxial semiconductor layer is not a porous region;
- bonding the first substrate to a second substrate to obtain a multiple layer structure with the epitaxial semiconductor layer placed inside;
- separating the multiple layer structure at the ion implantation layer;
- and removing the ion implantation layer remaining on the separated second substrate.
A process for producing a semiconductor article comprising steps of preparing a first substrate comprised of a silicon substrate, an epitaxial semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate, wherein said silicon substrate is not a porous region, and the epitaxial semiconductor layer, wherein said epitaxial semiconductor layer is not a porous region;
- bonding the first substrate to a second substrate to obtain a multiple layer structure with the epitaxial semiconductor layer placed inside;
- separating the multiple layer structure at the ion implantation layer;
- removing the ion implantation layer remaining on the separated second substrate;
- and reusing the first substrate, after removal of the remaining ion implantation layer therefrom, as a first or second substrate material.
A process for producing a semiconductor article comprising the steps of preparing a first substrate comprised of a silicon substrate, an epitaxial semiconductor layer located on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate, wherein said silicon substrate is not a porous region, and the epitaxial semiconductor layer, wherein said epitaxial semiconductor layer is not a porous region;
- bonding the first substrate to a second substrate to obtain a multiple layer structure with the epitaxial semiconductor layer placed inside;
- separating the multiple layer structure at the ion implantation layer;
- and then hydrogen-annealing said epitaxial semiconductor layer transferred to the second substrate after said separating step.
A process for producing a semiconductor article comprising the steps of preparing a first substrate comprised of a silicon substrate, wherein said silicon substrate is not a porous region, an epitaxial semiconductor layer located on the silicon substrate, wherein said epitaxial semiconductor layer is not a porous region, and an ion implantation layer formed in at least one of the silicon substrate and the epitaxial semiconductor layer;
- bonding the first substrate to a second substrate to obtain a multiple layer structure with the epitaxial semiconductor layer placed inside;
- separating the multiple layer structure at the ion implantation layer;
- and then polishing a surface of said epitaxial semiconductor layer transferred to the second substrate after said separating step.
A process for producing a semiconductor article comprising the steps of preparing a first substrate comprised of a silicon substrate and an ion implantation layer formed in said silicon substrate which is a nonporous region;
- bonding the first substrate to a second substrate to obtain a multiple layer structure;
- separating the multiple layer structure at the ion implantation layer;
- and then hydrogen-annealing a portion of the first substrate transferred to the second substrate.
Dependencies are inferred from the claim text.