Production method of semiconductor device

Abstract

A production method of a semiconductor device is provided and includes providing a silicon substrate including a first main surface; forming a silicon oxide film over the first main surface of the silicon substrate; forming an amorphous silicon film over the silicon oxide film; forming a metal layer over the amorphous silicon film; changing the amorphous silicon film into a crystal silicon film by annealing the silicon substrate over which the metal layer is formed; forming a transistor using a portion of the crystal silicon film as a channel; and forming a capacitor next to the transistor as viewed in a direction perpendicular to the first main surface, the capacitor being electrically connected to the transistor.

Dependencies are inferred from the claim text.