Detachable temporary substrate compatible with very high temperatures and process for transferring a working layer from the substrate

A temporary substrate, which is detachable at a detachment temperature higher than 1000° C., comprising:

• a semiconductor working layer extending along a main plane;
• a carrier substrate;
• an intermediate layer arranged between the semiconductor working layer and the carrier substrate, the intermediate layer having a thickness, along an axis normal to the main plane, less than 20 nm;
• a bonding interface located in the intermediate layer or adjacent thereto;
• and
• atoms of at least one gaseous species being distributed according to a concentration profile along the axis normal to the main plane with a maximum concentration higher than 1021/cm3, wherein the atoms, the intermediate layer, the carrier substrate, and the semiconductor working layer are configured such that the atoms remain trapped in the intermediate layer and/or in an adjacent layer of the carrier substrate with a thickness less than or equal to 10 nm and/or in an adjacent sublayer of the semiconductor working layer with a thickness less than or equal to 10 nm when the temporary substrate is subjected to a temperature lower than the detachment temperature, and such that the atoms diffuse to a detachment interface when the temporary substrate is subjected to a temperature higher than or equal to the detachment temperature,
• wherein the intermediate layer comprises at least one material chosen from among tungsten, nickel, titanium, aluminum, molybdenum, tantalum, titanium nitride, tantalum nitride, or amorphous silicon.