H10P 30/209
In silicon to make buried insulating layers
Official title: {in silicon to make buried insulating layers}
H10P30/209 (In silicon to make buried insulating layers) appears on 363 US grants and 315 published applications in this corpus.
Search patents in H10P- Granted patents
- 363
- Published applications
- 315
- Assignees
- 124
- Inventors
- 734
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 5 | 0 |
| 1988 | 2 | 0 |
| 1989 | 6 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 7 | 0 |
| 1996 | 4 | 0 |
| 1997 | 6 | 0 |
| 1998 | 5 | 0 |
| 1999 | 11 | 0 |
| 2000 | 7 | 0 |
| 2001 | 14 | 7 |
| 2002 | 14 | 8 |
| 2003 | 9 | 8 |
| 2004 | 12 | 9 |
| 2005 | 2 | 16 |
| 2006 | 10 | 13 |
| 2007 | 11 | 13 |
| 2008 | 5 | 13 |
| 2009 | 8 | 13 |
| 2010 | 7 | 9 |
| 2011 | 10 | 4 |
| 2012 | 14 | 6 |
| 2013 | 4 | 9 |
| 2014 | 7 | 8 |
| 2015 | 8 | 14 |
| 2016 | 15 | 21 |
| 2017 | 16 | 13 |
| 2018 | 14 | 19 |
| 2019 | 20 | 19 |
| 2020 | 24 | 13 |
| 2021 | 9 | 19 |
| 2022 | 14 | 23 |
| 2023 | 18 | 16 |
| 2024 | 12 | 9 |
| 2025 | 10 | 7 |
| 2026 | 5 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- SOI device structure for robust isolation4 Aug 2026US 12,701,754 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods for oxidizing a silicon hardmask using ion implant17 Mar 2026US 12,581,884 B2APPLIED Materials.Inc.
- Method for fabricating a semiconductor device10 Mar 2026US 12,575,387 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming wafer-to-wafer bonding structure10 Mar 2026US 12,575,464 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Display device and method of fabricating the same27 Jan 2026US 12,538,722 B2Samsung Display Co., Ltd.
- Semiconductor device and method for forming the same13 Aug 2026US 2026/0239738 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and method for manufacturing the same12 Mar 2026US 2026/0075801 A1Winbond Electronics Corp.
- Method Of Manufacturing Semiconductor Device And A Semiconductor Device26 Feb 2026US 2026/0059854 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same19 Feb 2026US 2026/0052740 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Evaluation method of semiconductor substrate and manufacturing method of semiconductor device15 Jan 2026US 2026/0018468 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant195US 5,792,679 ASharp Kabushiki Kaisha · 1998
- Patterned SOI regions in semiconductor chips183US 6,333,532 B1International Business Machines Corporation · 2001
- Methodology for control of short channel effects in MOS transistors164US 6,362,082 B1Intel Corporation · 2002
- Gettering technique for silicon-on-insulator wafers155US 6,083,324 ASilicon Genesis Corporation · 2000
- Trench power MOSFET device140US 4,967,245 ASiliconix Incorporated · 1990