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US 6,362,082 B1Granted
Methodology for control of short channel effects in MOS transistors
AssigneeIntel Corporation
InventorsBrian S. Doyle, Brian Roberds
Life of this patent
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Abstract
A method of improving short channel effects in a transistor. First, a substance is implanted in a substrate. The substrate is then annealed such that the implanted substance forms at least one void in the substrate. Then, a transistor having a source, a drain, and a channel region is formed on the substrate, wherein the at least one void is in the channel region of the transistor.
Claims18
A method to improve a short channel effect in a transistor comprising:
- implanting a substance in a substrate;
- annealing said substrate such that said implanted substance forms a void in said substrate;
- and,
- forming a transistor on said substrate, in which a channel region of said transistor includes said void to inhibit lines of force from a drain of said transistor from terminating at a source of said transistor.
1 more element
A method to improve a short channel effect in a transistor comprising:
- implanting a gaseous substance in a substrate;
- annealing said substrate such that said implanted gaseous substance forms a void in said substrate;
- forming a transistor on said substrate, in which a channel region of said transistor includes said void to inhibit lines of force from a drain of said transistor from terminating at a source of said transistor;
- and,
- having said void provide a barrier for said lines of force between said source and said drain to reduce leakage current.
2 more elements
Dependencies are inferred from the claim text.