Back to results
US 12,581,884 B2Granted
Methods for oxidizing a silicon hardmask using ion implant
AssigneeApplied Materials, Inc.
InventorsSungho Jo, Rajesh Prasad, Kyuha Shim
Life of this patent
Estimating the term…
Abstract
Methods of forming a silicon hardmask are disclosed. In one example, a method may include forming a silicon mask over a device layer, forming a carbon mask over the silicon mask, and forming an opening through the carbon mask. The method may further include forming an oxide layer within the opening by performing an ion implantation process to an upper surface of the silicon mask.
Claims17
A method, comprising:
- providing a silicon hardmask over a device layer;
- providing a carbon hardmask over the silicon hardmask;
- forming an opening through the carbon hardmask;
- forming an oxide layer within the opening by performing an ion implantation process to an upper surface of the silicon hardmask, wherein the ion implantation process comprises directing ions into the upper surface of the silicon hardmask left uncovered by the carbon hardmask, wherein the ions are selected from a species configured to retard oxidation of the carbon hardmask;
- removing the carbon hardmask;
- and
- etching the silicon hardmask left uncovered by the oxide layer to form a plurality of hardmask patterning lines over the device layer.
4 more elements
A method of forming an oxide layer, comprising:
- forming a silicon hardmask over a device layer;
- forming a carbon hardmask over the silicon hardmask;
- forming an opening through the carbon hardmask;
- forming an oxide layer within the opening by performing an ion implantation process to an upper surface of the silicon hardmask, wherein the ion implantation process comprises directing ions into the upper surface of the silicon hardmask left uncovered by the carbon hardmask, wherein the ions are selected from a species configured to retard oxidation of the carbon hardmask;
- removing the carbon hardmask;
- and
- etching the silicon hardmask left uncovered by the oxide layer to form a plurality of hardmask patterning lines over the device layer.
4 more elements
A method of forming an oxide layer, comprising:
- forming a silicon hardmask over a device layer;
- forming a carbon hardmask over the silicon hardmask;
- forming an opening through the carbon hardmask, wherein the opening is formed selective to an upper surface of the silicon hardmask;
- forming an oxide layer along the upper surface of the silicon hardmask left exposed within the opening by directing ions into the upper surface of the silicon hardmask, wherein the ions are selected from a species configured to retard oxidation of the carbon hardmask, and wherein the oxide layer is formed to a height above a plane defined by a bottom surface of the carbon hardmask as a result of the ions being directed into the upper surface of the silicon hardmask;
- removing the carbon hardmask;
- and
- etching the silicon hardmask left uncovered by the oxide layer to form a plurality of hardmask patterning lines over the device layer.
4 more elements
Dependencies are inferred from the claim text.