H10P 14/3446
Transition metal elements
Official title: {Transition metal elements; Rare earth elements}
H10P14/3446 (Transition metal elements) appears on 410 US grants and 437 published applications in this corpus.
Search patents in H10P- Granted patents
- 410
- Published applications
- 437
- Assignees
- 238
- Inventors
- 965
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 7 | 0 |
| 1978 | 3 | 0 |
| 1979 | 4 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 5 | 0 |
| 1989 | 7 | 0 |
| 1990 | 4 | 0 |
| 1991 | 6 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 3 |
| 2002 | 6 | 9 |
| 2003 | 4 | 8 |
| 2004 | 5 | 8 |
| 2005 | 5 | 8 |
| 2006 | 4 | 10 |
| 2007 | 7 | 16 |
| 2008 | 4 | 8 |
| 2009 | 8 | 11 |
| 2010 | 10 | 18 |
| 2011 | 9 | 17 |
| 2012 | 18 | 25 |
| 2013 | 16 | 27 |
| 2014 | 26 | 23 |
| 2015 | 15 | 25 |
| 2016 | 29 | 11 |
| 2017 | 7 | 23 |
| 2018 | 17 | 21 |
| 2019 | 19 | 21 |
| 2020 | 18 | 17 |
| 2021 | 22 | 29 |
| 2022 | 15 | 16 |
| 2023 | 17 | 28 |
| 2024 | 15 | 33 |
| 2025 | 25 | 20 |
| 2026 | 10 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Semiconductor film25 Aug 2026US 12,720,828 B2NGK Insulators, Ltd.
- Display device18 Aug 2026US 12,711,927 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and method of manufacturing semiconductor device12 May 2026US 12,628,368 B2Mitsubishi Electric Corporation
- Field-programmable ferro-diodes for reconfigurable in-memory-computing7 Apr 2026US 12,597,456 B2The Trustees of the University of Pennsylvania
- Crystalline oxide semiconductor film, layered structure, and semiconductor device23 Jul 2026US 2026/0209989 A1Shin-Etsu Chemical Co., Ltd.
- Epitaxial oxide transistor9 Apr 2026US 2026/0101611 A1Silanna UV Technologies Pte Ltd
- Film forming method and film forming apparatus20 Nov 2025US 2025/0354260 A1Shin-Etsu Chemical Co., Ltd.
- Epitaxial Oxide Integrated Circuit20 Nov 2025US 2025/0359399 A1Silanna UV Technologies Pte Ltd
- Nitride semiconductor substrate and method for producing same16 Oct 2025US 2025/0323037 A1Shin-Etsu Handotai Co., Ltd.
Most cited
By later US patents
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- GaN-based devices using (Ga, AL, In)N base layers311US 6,156,581 AAdvanced Technology Materials, Inc. · 2000
- III-V nitride substrate boule and method of making and using the same249US 6,596,079 B1Advanced Technology Materials, Inc. · 2003
- Method of making a single crystals Ga*N article196US 5,679,152 AAdvanced Technology Materials, Inc. · 1997
- Bulk single crystal gallium nitride and method of making same144US 6,765,240 B2Cree, Inc. · 2004