Method of making a single crystals Ga*N article
AssigneeAdvanced Technology Materials, Inc.
InventorsMichael A. Tischler, Thomas F. Kuech
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Abstract
A method of making a single crystal Ga*N article, including the steps of: providing a substrate of crystalline material having a surface which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention in an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures.
Claims18
A method of making a single crystal Ga*N article, including the steps of:
- providing a sacrificial base of crystalline material different from, and having a surface which is epitaxially compatible with, Ga*N;
- depositing a layer of single crystal Ga*N over a surface of the sacrificial base substrate;
- and
- etching away the sacrificial base from the layer of single crystal Ga*N while the crystal is close to the growth temperature, to recover the layer of single crystal Ga*N as a single crystal Ga*N article from which the sacrificial base has been removed.
Dependencies are inferred from the claim text.