H10F 71/1274
Comprising nitrides
Official title: {comprising nitrides, e.g. InGaN or InGaAlN}
H10F71/1274 (Comprising nitrides) appears on 149 US grants and 214 published applications in this corpus.
Search patents in H10F- Granted patents
- 149
- Published applications
- 214
- Assignees
- 105
- Inventors
- 405
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 7 |
| 2011 | 1 | 9 |
| 2012 | 2 | 15 |
| 2013 | 7 | 16 |
| 2014 | 7 | 15 |
| 2015 | 16 | 24 |
| 2016 | 22 | 14 |
| 2017 | 13 | 13 |
| 2018 | 12 | 13 |
| 2019 | 12 | 17 |
| 2020 | 11 | 13 |
| 2021 | 13 | 16 |
| 2022 | 10 | 11 |
| 2023 | 1 | 6 |
| 2024 | 9 | 12 |
| 2025 | 6 | 3 |
| 2026 | 6 | 6 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Solar blind solid state gallium containing photodiode device and related method29 Sep 2026US 12,751,096 B2Palomino Laboratories, Inc.
- Method for manufacturing, by differentiated electrochemical porosification, a growth substrate including mesas having various porosification levels16 Jun 2026US 12,660,365 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- TOPCon cell, method for manufacturing the same, and electrical device26 May 2026US 12,641,908 B2Tongwei Solar (Meishan) Co., Ltd.
- Optical device and method10 Mar 2026US 12,575,215 B2KYOCERA SLD Laser, Inc.
- Epitaxial structure of nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and preparation method thereof20 Jan 2026US 12,532,566 B2South China University of Technology
- Ferroelectric iii-nitride alloy-based photodetectors10 Sep 2026US 2026/0271411 A1The Regents of the University of Michigan
- Inverted metamorphic multijunction solar cells having a permanent supporting substrate2 Jul 2026US 2026/0190504 A1SolAero Technologies Corp.
- Optical device and method2 Jul 2026US 2026/0190534 A1KYOCERA SLD Laser, Inc.
- Gallium nitride containing high speed photodiode device and related method11 Jun 2026US 2026/0164837 A1KYOCERA Corporation
- Photodetector, photoelectric sensor, methods of forming the same and determining concentration21 May 2026US 2026/0143829 A1Nanyang Technological University
Most cited
By later US patents
- Gallium nitride material devices and methods of forming the same72US 7,233,028 B2Nitronex Corporation · 2007
- Lattice matchable alloy for solar cells15US 8,575,473 B2Solar Junction Corporation · 2013
- Methods for relaxation and transfer of strained layers and structures fabricated thereby12US 7,981,767 B2S. O. I. Tec Silicon on Insulator Technologies · 2011
- Electronic devices comprising N-type and P-type superlattices10US 10,128,404 B2Silanna UV Technologies Pte Ltd · 2018
- Method of manufacturing a printable composition of a liquid or gel suspension of diodes10US 8,852,467 B2Nthdegree Technologies Worldwide Inc. · 2014