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US 2026/0190504 A1Published application
Inverted metamorphic multijunction solar cells having a permanent supporting substrate
AssigneeSolAero Technologies Corp.
InventorsArthur Cornfeld, Jeff Stainfeldt
Life of this patent
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Abstract
A solar cell fabricated from a semiconductor growth substrate; that is sub sequentially removed a sequence of layers of semiconductor material grown on the semiconductor growth substrate forming the solar cell; a metal contact layer deposited over the sequence of layers; of a permanent supporting substrate being affixed directly over the metal contact layer and permanently bonded thereto.
Claims11
A method of manufacturing a solar cell comprising:
- providing a semiconductor growth substrate;
- depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell, including a first solar subcell deposited on said growth substrate having a first band gap;
- a second solar subcell deposited over said first solar subcell having a second band gap smaller than said first band gap;
- a grading interlayer deposited over said second solar subcell composed of InGaAlAs and having a third band gap larger than said second band gap;
- a third solar subcell deposited over the grading interlayer and having a fourth band gap smaller than said second band gap such that said third solar subcell is lattice mismatched with respect to said second solar subcell:
- depositing a metal contact layer over said third solar subcell;
- depositing a coating layer over the metal contact layer;
- providing a permanent support substrate;
- bonding an adhesive polymer layer to one surface of the permanent support substrate at a curing temperature above 350° C.;
- affixing the cured adhesive surface of the permanent support substrate over said metal contact layer;
- permanently bonding the permanent support substrate to the metal contact layer by a thermocompressive technique;
- and
- removing the growth substrate.
10 more elements
A method of manufacturing a solar cell comprising:
- providing a semiconductor growth substrate;
- depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell, including a first solar subcell deposited on said growth substrate having a first band gap;
- a second solar subcell deposited over said first solar subcell having a second band gap smaller than said first band gap;
- a grading interlayer deposited over said second solar subcell composed of InGaAlAs and having a third band gap larger than said second band gap;
- a third solar subcell deposited over the grading interlayer and having a fourth band gap smaller than said second band gap such that said third solar subcell is lattice mismatched with respect to said second solar subcell;
- depositing a metal contact layer over said third solar subcell;
- depositing a coating layer over the metal contact layer;
- curing the coating layer by a soft bake by UV exposure;
- annealing the coating layer;
- depositing a bonding layer over the annealed coating layer;
- providing a permanent support substrate;
- bonding an adhesive polymer layer to one surface of the permanent support substrate at a curing temperature above 350° C.;
- affixing the cured adhesive surface of the permanent support substrate directly over the bonding layer;
- permanently bonding the permanent support substrate to the metal contact layer by a thermocompressive technique;
- and
- removing the growth substrate.
13 more elements
Dependencies are inferred from the claim text.