Electronic devices comprising N-type and P-type superlattices
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
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Abstract
A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.
Claims18
A method of making a p-type or n-type superlattice via a film formation process, the method comprising the steps of:
- a. loading a substrate into a reaction chamber;
- b. heating the substrate to a film formation temperature;
- c. forming on the substrate a host layer consisting essentially of a semiconductor material;
- d. forming above the host layer an impurity layer consisting of a monolayer of donor or acceptor atoms;
- e. forming above the impurity layer another host layer consisting essentially of the semiconductor material;
- f. repeating steps (d) to (e) until the superlattice reaches a desired thickness or comprises a desired number of layers;
- g. before step (d), forming a first nitrogen terminated surface on the host layer;
- and
- h. before step (e), forming a second nitrogen terminated surface on the impurity layer;
- wherein:
- step (d) further comprises forming the impurity layer on the first nitrogen terminated surface;
- step (e) further comprises forming the other host layer on the second nitrogen terminated surface;
- and
- the host layers consist essentially of a group III metal nitride semiconductor material.
A method of making an electronic device comprising an n-type superlattice providing n-type conductivity and a p-type superlattice providing p-type conductivity, the method comprising the steps of:
- a. for the n-type superlattice, forming on a substrate a first host layer consisting essentially of a group III metal nitride semiconductor material;
- b. forming above the first host layer a donor impurity layer consisting of a monolayer of donor atoms;
- c. forming above the donor impurity layer a second host layer consisting essentially of the group III metal nitride semiconductor material;
- d. repeating steps (b) to (c) until the n-type superlattice reaches a desired thickness or comprises a desired number of alternating host layers and donor impurity layers;
- e. for the p-type superlattice, forming above the n-type superlattice a third host layer consisting essentially of the group III metal nitride semiconductor material;
- f. forming above the third host layer an acceptor impurity layer consisting of a monolayer of acceptor atoms;
- g. forming above the acceptor impurity layer a fourth host layer consisting essentially of the group III metal nitride semiconductor material;
- and
- h. repeating steps (f) to (g) until the p-type superlattice reaches a desired thickness or comprises a desired number of alternating host layers and acceptor impurity layers;
- wherein the group III metal in the group III metal nitride semiconductor material comprises at least about 50% Al by mol.
Dependencies are inferred from the claim text.